GaN Epitaxial Wafer
(69)
F.E. lackierte GaN Substrates Resistivity > 10 ⁶ Ω·Cm Rf-Geräte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Mehr sehen
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625um flachen dem Saphir zu des Zoll-675um 4 blauen LED GaN Epitaxial Wafer On Sapphire SSP
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Mehr sehen
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5 x 10 mm2 M Face GaN Epitaxiewafer Dicke 325 um 375 um
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Mehr sehen
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4-Zoll-N-Typ-UID-dotiertes GaN auf Saphir-Wafer SSP-Widerstand＞0,5 Ω cm LED, Laser, PIN-Epitaxie-Wafer
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Mehr sehen
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4-Zoll-blauer LED-GaN-Epitaxialwafer C-Ebene, flacher Saphir
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Mehr sehen
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375 um GaN-Epitaxialwafer, freistehende U-GaN-SI-GaN-Substrate
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Mehr sehen
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4 Zoll Fe-doppiertes freistehendes GaN-Substrat Galliumnitrid Substrat
Preis: Negotiable
MOQ: 1
Lieferzeit: Negotiable
Marke: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Mehr sehen
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4 Zoll Fe-doppiertes freistehendes GaN-Substrat Galliumnitrid
Preis: Negotiable
MOQ: 1
Lieferzeit: Negotiable
Marke: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Mehr sehen
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2 Zoll undoppiertes freistehendes GaN-Substrat
Preis: Negotiable
MOQ: 1
Lieferzeit: Negotiable
Marke: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... Mehr sehen
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12.5mm 2inch freistehendes N GaN Epi Wafer Si Doped
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... Mehr sehen
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Zoll GaN Epi Wafer Dimensions der Stärke-370um 430um 2 50mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... Mehr sehen
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5 x 10 mm2 GaN-Epitaxie-Wafer, undotierter SI-Typ
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... Mehr sehen
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Einkristall-Galliumnitrid-Halbleiterwafer TTV 10um
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... Mehr sehen
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Fläche des Gallium-Nitrid-Halbleiterwafer-325um 375um C
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... Mehr sehen
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5x10mm2 Sp Face Gan Epitaxiewafer Undotiertes Si Typ Gan Einkristallsubstrat
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... Mehr sehen
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UNO lackierte n-Art GaN Single Crystal Substrate 5x10mm2 M Face
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... Mehr sehen
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625um bis 675um 4 Zoll Blaue LED Galliumnitrid GaN Epitaxial Wafer auf Saphir SSP Flat Saphir
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 week days
Marke: GaNova
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Mehr sehen
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GaN Epitaxial Wafer Essential for High Voltage High Frequency Chip Production
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 weeks
Marke: Ganova
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Mehr sehen
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2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 weeks
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Mehr sehen
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... Mehr sehen
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