RTP-SA-8 Aufheizungssystem für schnelle thermische Verarbeitung
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3 month
Marke: Ganova
Markieren:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Mehr sehen
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150mm schnelles thermisches Vergütungssystem mit drei Satz-Prozessgasen
Preis: Negotiable
MOQ: 1
Lieferzeit: 8-10week days
Marke: GaNova
Markieren:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Mehr sehen
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F.E. lackierte GaN Substrates Resistivity > 10 ⁶ Ω·Cm Rf-Geräte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Mehr sehen
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625um flachen dem Saphir zu des Zoll-675um 4 blauen LED GaN Epitaxial Wafer On Sapphire SSP
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Mehr sehen
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JDCD08-001-006 6inch C-Fläche Sapphire Substrate Wafer
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Mehr sehen
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GaN 2 Zoll Galliumnitrid Einzelkristall Substrat
Preis: Negotiable
MOQ: 1
Lieferzeit: Negotiable
Marke: Ganova
Markieren:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Mehr sehen
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Einzelkristall Gan Epi Wafer Galliumnitrid Substrat 4 Zoll
Preis: Negotiable
MOQ: 1
Lieferzeit: Negotiable
Marke: Ganova
Markieren:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Mehr sehen
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4 Zoll Fe-Doppierte freistehende GaN-Substrat Galliumnitrid
Preis: Negotiable
MOQ: 1
Lieferzeit: Negotiable
Marke: Ganova
Markieren:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Mehr sehen
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2-Zoll-Leistungsgerät Hochelektronen-Mobilitäts-Transistor Epitaxial Wafer
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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625um bis 675um 4 Zoll Blaue LED Galliumnitrid GaN Epitaxial Wafer auf Saphir SSP Flat Saphir
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Mehr sehen
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ALN 10*10mm2 AlN Einkristall 400±50μM S/P/R-Grad
Preis: Negotiable
MOQ: 1
Lieferzeit: Negotiable
Marke: GaNova
Markieren:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Mehr sehen
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2 Zoll GaN auf Silizium HEMT Epi Wafer für Power-Gerät
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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2 ′′ 6-Zoll-N-Typ GaN auf Saphir-Epitaxial-Wafer für LED-Laser-PIN-Gerät
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 weeks
Markieren:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Mehr sehen
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1 Zoll AlN Einkristallwafer 400±50μM S/P/R-Grad
Preis: Negotiable
Lieferzeit: Negotiable
Marke: GaNova
Markieren:1 Inch aln wafer, aln wafer 1 Inch, aluminum nitride wafer aln
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Mehr sehen
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GaN-Epitaxialwafer ist für die Produktion von Hochspannungs-Hochfrequenzchips unerlässlich
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 weeks
Marke: Ganova
Markieren:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Mehr sehen
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AlGaN-Schranke 4 Zoll GaN auf Silizium-HEMT Epi-Wafer Galliumnitrid GaN-on-Si
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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6 Zoll GaN auf Silizium HEMT Epi Wafer Stromgerät Galliumnitrid GaN auf Si
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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GaN-violettes Laser auf Silizium 2 Zoll GaN auf Silizium HEMT Epi-Wafer UV LD Epi-Wafer
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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2 Zoll GaN auf Silizium Blau LD Epi Wafer GaN blauer Laser auf Silizium
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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Blaue LED GaN auf Silizium-Wafer Blaue Laser GaN Epitaxial-Wafer
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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