GaN Epitaxial Wafer Essential for High Voltage High Frequency Chip Production
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 weeks
Marke: Ganova
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Mehr sehen
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2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device
Preis: Negotiable
MOQ: 5
Lieferzeit: 3-4 weeks
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Mehr sehen
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JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing
Preis: Negotiable
MOQ: 1
Lieferzeit: 3-4 week days
Marke: GaNova
5-inch SOI epitaxial wafer for MEMS processing Overview Silicon Wafers (Si Wafer) are thin slices of highly pure crystallized Silicon. Silicon wafers act as a substrate for microelectronic devices and are especially useful in building electronic circuits because of their conductivity and affordabili... Mehr sehen
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JDCD07-001-004 7-Zoll-SOI-Epitaxialwafer für die MEMS-Verarbeitung
Preis: Negotiable
MOQ: 1
Lieferzeit: 3-4 week days
Marke: GaNova
7-inch SOI epitaxial wafer for MEMS processing Overview A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices that enrich our lives. Few of us have a chance to encounter an actual silicon wafer in daily life. A silicon wafer is a... Mehr sehen
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JDCD07-001-001 4-Zoll-SOI-Epitaxialwafer für die MEMS-Verarbeitung
Preis: Negotiable
MOQ: 1
Lieferzeit: 3-4 week days
Marke: GaNova
4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the "free electrons" that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure sil... Mehr sehen
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JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Mehr sehen
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JDCD08-001-007 8-Zoll-C-Plane-Saphir-Substratwafer
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: Negotiable
JDCD08-001-007 6inch C-Plane Sapphire Substrate Wafer Ruby and sapphires are both made of corundum (aluminium oxide - Al2O3). Corundum is one of the hardest known natural substance after diamond. In addition, because corundum is so hard and resistant to weathering, it can also be found in sedimentar... Mehr sehen
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... Mehr sehen
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4 Zoll P-Typ Mg-dotiertes GaN auf Saphir-Wafer SSP-Widerstand ~10 Ω cm LED-Laser-PIN-Epitaxie-Wafer
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic ... Mehr sehen
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2 Zoll C-Face Fe-dotierter SI-Typ freistehender GaN-Einkristall-Substratwiderstand > 10⁶ Ω·cm HF-Geräte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: Nanowin
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, sili... Mehr sehen
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625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Mehr sehen
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Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... Mehr sehen
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5x10mm2 Sp Face Gan Epitaxiewafer Undotiertes Si Typ Gan Einkristallsubstrat
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... Mehr sehen
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Gallium Nitride Semiconductor Wafer 325um 375um C Plane
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... Mehr sehen
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2-Zoll-freistehende SI-GaN-Substrate
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:350um GaN Epitaxial Wafer, Free Standing GaN Substrates, GaN Epitaxial Wafer 10 X 10.5 mm2
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated from the interface of AlGaN and GaN, the thickness ratio of Fe-doped and undoped GaN b... Mehr sehen
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Mehr sehen
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2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:GaN Epitaxial Wafer C Face, Fe Doped single crystal substrate, 2inch GaN Epitaxial Wafer
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were studied using metalorganic chemical vapor deposition for high breakdown voltage devic... Mehr sehen
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Hochreiner Al2O3＞99,995 % Saphir-Wafer, hochglanzpoliert, EPI-fähig
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: Negotiable
Markieren:Sapphire Wafer EPI Ready, led sapphire substrate R9, sapphire wafer A Plane
High purity Al2O3＞99.995% Sapphire Substrate Wafer Mirror Polished EPI-Ready JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material Sapphire Substrate Sapphire Substrate makes for superior window material for many ... Mehr sehen
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Einkristall-Galliumnitrid-Halbleiterwafer TTV 10um
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... Mehr sehen
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Einzelnes Kristallsubstrat GaN
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:GaN Single Crystal Substrate, gan epi wafer 400um, UKAS Single Crystal Substrate
2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 1015 cm−3 or less. De... Mehr sehen
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