Zuhause Produkte Videos Uns

Ga2O3-Wafer

(13)
China Sn-dotiertes Ga2O3-Wafer-Einkristallsubstrat 10x10mm2 zu verkaufen

Sn-dotiertes Ga2O3-Wafer-Einkristallsubstrat 10x10mm2

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Mehr sehen
➤ Besuch Webseite
China Simplex polierte Ga2O3 Oblate einzelner Crystal Substrate zu verkaufen

Simplex polierte Ga2O3 Oblate einzelner Crystal Substrate

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... Mehr sehen
➤ Besuch Webseite
China 0.6mm 0.8mm Ga2O3 einzelner Crystal Substrate Single Polishing zu verkaufen

0.6mm 0.8mm Ga2O3 einzelner Crystal Substrate Single Polishing

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... Mehr sehen
➤ Besuch Webseite
China JDCD04-001-007 10 x 10 mm2 (010) Sn-dotiertes freistehendes Ga2O3-Einkristall-Substrat Produktqualität Einzelpolierung zu verkaufen

JDCD04-001-007 10 x 10 mm2 (010) Sn-dotiertes freistehendes Ga2O3-Einkristall-Substrat Produktqualität Einzelpolierung

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... Mehr sehen
➤ Besuch Webseite
China Ra 0,3 nm Ga2O3 Einkristall-Epitaxialwafer 2 Zoll 4 Zoll zu verkaufen

Ra 0,3 nm Ga2O3 Einkristall-Epitaxialwafer 2 Zoll 4 Zoll

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Ga2O3 epitaxial wafer 2 Inch, Single Crystal Substrate 4 Inch, single crystal epitaxial wafer
Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filt... Mehr sehen
➤ Besuch Webseite
China Einseitig poliertes Ga2O3-Substrat Einkristalldicke 0,6 mm 0,8 mm zu verkaufen

Einseitig poliertes Ga2O3-Substrat Einkristalldicke 0,6 mm 0,8 mm

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:side polished Ga2O3 Substrate, 0.8mm Gallium Oxide substrate, Ga2O3 Substrate Single Crystal
Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 2.00E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor m... Mehr sehen
➤ Besuch Webseite
China FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm zu verkaufen

FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Ga2O3 Wafer 0.6mm, single crystal substrate 0.8mm, Ga2O3 Wafer 0.8mm
FWHM Mehr sehen
➤ Besuch Webseite
China Ga2O3 Fe-dotiertes Wafer-Einkristallsubstrat 10 x 10 mm2 freistehend zu verkaufen

Ga2O3 Fe-dotiertes Wafer-Einkristallsubstrat 10 x 10 mm2 freistehend

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Ga2O3 Fe Doped Wafer, Single crystal Ga2O3 substrate, Fe Doped Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Ga2O3 has a long history and the phase equilibria of the Al2O3-Ga2O3-... Mehr sehen
➤ Besuch Webseite
China Semiconductor Single Crystal Gallium Oxide Substrate UID Doping zu verkaufen

Semiconductor Single Crystal Gallium Oxide Substrate UID Doping

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:Single Crystal Gallium Oxide substrate, semiconductor wafer ISO, Gallium Oxide substrate UID Doping
Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM Mehr sehen
➤ Besuch Webseite
China JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing zu verkaufen

JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Resistance Mehr sehen
➤ Besuch Webseite
China JDCD04-001-003 10 x 10 mm2 100 (Off 6°) Fe-dotiertes freistehendes Ga2O3-Einkristallsubstrat Einzelpolierung in Produktqualität zu verkaufen

JDCD04-001-003 10 x 10 mm2 100 (Off 6°) Fe-dotiertes freistehendes Ga2O3-Einkristallsubstrat Einzelpolierung in Produktqualität

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤5nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Power density is greatly improved in gallium nitride devices compar... Mehr sehen
➤ Besuch Webseite
China 10 x 15 mm2 UID-dotierter freistehender Ga2O3-Wafer, Einzelpolierung zu verkaufen

10 x 15 mm2 UID-dotierter freistehender Ga2O3-Wafer, Einzelpolierung

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:10x15mm2 Ga2O3 Wafer, UID Doped Ga2O3 Substrate, Ga2O3 Wafer Single Polishing
JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic ... Mehr sehen
➤ Besuch Webseite
China 10x10mm Ga2O3 Oblate 10x15mm einzelner Crystal Substrate zu verkaufen

10x10mm Ga2O3 Oblate 10x15mm einzelner Crystal Substrate

Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:10x10mm Ga2O3 Wafer, 10x15mm single crystal wafer, Ga2O3 Wafer 10x15mm
10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters With increased energy efficiency, smaller req... Mehr sehen
➤ Besuch Webseite