Sic Epitaxial- Oblate
(31)
150.0mm +0mm/-0.2mm sic Epitaxial- Oblate keine Sekundärebene 3mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Mehr sehen
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47,5 Millimeter ± Epitaxial- Oblate 150,0 Millimeter +0mm/-0.2mm paralleles to<11-20>±1° 1,5 Millimeter sic
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Mehr sehen
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4H sic Epitaxial- Oblate ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 Millimeter +0mm/-0.2mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... Mehr sehen
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4H sic Epitaxial- Oblate 0.015Ω•cm-0.025Ω•² 150,0 Millimeter +0mm/-0.2mm cm ≤4000/cm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... Mehr sehen
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P-Level 2-Zoll-SiC-Substrat für Leistungsgeräte und Mikrowellengeräte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... Mehr sehen
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2-Zoll-SiC-Substrat 350 μm für anspruchsvolle Leistungselektronik
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... Mehr sehen
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0.015Ω•cm-0.025Ω•Epitaxial- Oblaten-C-Gesichts-optischer polnischer Si-Gesicht CMP cm sic
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC Epitaxial Wafer C-Face, Optical Polish sic wafer, Si-Face CMP Sic Epitaxial Wafer
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. T... Mehr sehen
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260 μm Siliziumkarbid-Substrat P-Ebene für Leistungsgeräte und Mikrowellengeräte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:260um silicon carbide substrate, Power Devices Epitaxial Wafer, silicon carbide substrate P Level
4H-N/SI260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC subs... Mehr sehen
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Polytyp Keine Zulässig SiC-Epitaxie-Wafer P-MOS P-SBD D-Qualität
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC Epitaxial Wafer P-MOS, D Grade silicon epi wafer, SiC Epitaxial Wafer P-SBD
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to... Mehr sehen
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4H SiC-Epitaxialwafer SiC-Wafer-Substrat für photonische Geräte ISO9001
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC Epitaxial Wafer Photonic Devices, 4H 2 inch wafer, SiC Epitaxial Wafer ISO9001
4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth (called epitaxy) for use in making semiconductor and photonic devices such as light-emitting diodes (LEDs). Several methods... Mehr sehen
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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to convention... Mehr sehen
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4 Zoll 4H-SiC-Substrat P-Level N-Typ 350,0 ± 25,0 μM MPD ≤ 0,5/Cm2 Widerstand 0,015 Ω·Cm – 0,025 Ω·Cm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to... Mehr sehen
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4-Zoll-4H-SiC-Substrat P-Level SI 500,0 ± 25,0 μM MPD ≤ 0,3/Cm2 Resistivity ≥ 1E9Ω·Cm Für Strom und Mikrowelle
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher therm... Mehr sehen
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P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:P-MOS Grade SiC Epi Wafer, 150.0mm SiC Substrate, SiC Epi Wafer P Level
P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview At the system level, this results in highly compact solutions with vastly improved energy efficiency at red... Mehr sehen
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Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC Epitaxial Wafer C-Face, Silicon Carbide Epitaxial Wafers, CMP SiC Epitaxial Wafer
JDCD03-001-004 SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face:CMP Overview It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material. The lattice structure and orientation or lattice symmetry of the thin film material is i... Mehr sehen
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6 Zoll 4H SiC N-Substrat 47,5 mm Keine sekundäre Ebene
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC N Type Substrate, 6inch SiC Wafer, 4H N Type substrate
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial... Mehr sehen
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2 Inch Semiconductor Wafer P Level 260μm For Power Devices Microwave Devices
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:2 Inch semiconductor wafer, Microwave Devices semiconductor wafer, Semiconductor Wafer P Level
JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency semiconductor devices that operate well beyond the ca... Mehr sehen
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Nein Sekundäres flaches SiC-Substrat 150,0 mm 47,5 mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:No Secondary Flat SiC Substrate, 47.5mm semiconductor wafer, SiC Substrate 150.0mm
2-Inch SiC Substrate 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm No Secondary Flat JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Our relentless focus on continuously improving materials quality and increasing substrate diameters directly ben... Mehr sehen
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150,0 mm +0 mm/-0,2 mm SiC-Epitaxialwafer 47,5 mm ± 1,5 mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC Epitaxial Wafer ISO, silicon carbide wafer fabrication, SiC Epitaxial Wafer 47.5 mm
150.0mm +0mm/-0.2mm JDCD03-001-004 SiC Epitaxial Wafer 47.5 mm ± 1.5 mm Overview Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to be operated at extremely high power levels and still dissipate the large amou... Mehr sehen
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6-Zoll-4H-SiC-Substrat N Typ P SBD-Qualität 350 μm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:6inch 4H SiC Substrate, 350um silicon carbide epitaxy, 4H SiC Substrate N Type
6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grow... Mehr sehen
➤ Besuch Webseite