Sic Epitaxial- Oblate
(42)
2-Zoll-Leistungsgerät Hochelektronen-Mobilitäts-Transistor Epitaxial Wafer
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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2 Zoll GaN auf Silizium HEMT Epi Wafer für Power-Gerät
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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AlGaN-Schranke 4 Zoll GaN auf Silizium-HEMT Epi-Wafer Galliumnitrid GaN-on-Si
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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6 Zoll GaN auf Silizium HEMT Epi Wafer Stromgerät Galliumnitrid GaN auf Si
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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GaN-violettes Laser auf Silizium 2 Zoll GaN auf Silizium HEMT Epi-Wafer UV LD Epi-Wafer
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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2 Zoll GaN auf Silizium Blau LD Epi Wafer GaN blauer Laser auf Silizium
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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Blaue LED GaN auf Silizium-Wafer Blaue Laser GaN Epitaxial-Wafer
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Mehr sehen
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2 Zoll GaN auf Silizium Grün LED Epi-Wafer Galliumnitrid auf Silizium
Preis: Negotiable
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Mehr sehen
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4 Zoll GaN auf Silizium Grün LED Epi Wafer SiC epitaxial Wafer
Preis: 1000
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Mehr sehen
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4 Zoll GaN auf Silizium Grün LED Epi Wafer SiC epitaxial Wafer
Preis: 1000
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Mehr sehen
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4 Zoll uGaN auf Silizium undoped Galliumnitrid auf Silizium Epitaxial Wafer
Preis: 1000
MOQ: 5
Lieferzeit: Negotiable
Marke: Ganova
Markieren:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Mehr sehen
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150.0mm +0mm/-0.2mm sic Epitaxial- Oblate keine Sekundärebene 3mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Mehr sehen
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47,5 Millimeter ± Epitaxial- Oblate 150,0 Millimeter +0mm/-0.2mm paralleles to<11-20>±1° 1,5 Millimeter sic
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Mehr sehen
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4H sic Epitaxial- Oblate ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 Millimeter +0mm/-0.2mm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... Mehr sehen
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4H sic Epitaxial- Oblate 0.015Ω•cm-0.025Ω•² 150,0 Millimeter +0mm/-0.2mm cm ≤4000/cm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... Mehr sehen
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P-Level 2-Zoll-SiC-Substrat für Leistungsgeräte und Mikrowellengeräte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... Mehr sehen
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2-Zoll-SiC-Substrat 350 μm für anspruchsvolle Leistungselektronik
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... Mehr sehen
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0.015Ω•cm-0.025Ω•Epitaxial- Oblaten-C-Gesichts-optischer polnischer Si-Gesicht CMP cm sic
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC Epitaxial Wafer C-Face, Optical Polish sic wafer, Si-Face CMP Sic Epitaxial Wafer
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. T... Mehr sehen
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260 μm Siliziumkarbid-Substrat P-Ebene für Leistungsgeräte und Mikrowellengeräte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:260um silicon carbide substrate, Power Devices Epitaxial Wafer, silicon carbide substrate P Level
4H-N/SI260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC subs... Mehr sehen
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Polytyp Keine Zulässig SiC-Epitaxie-Wafer P-MOS P-SBD D-Qualität
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 3-4 week days
Marke: GaNova
Markieren:SiC Epitaxial Wafer P-MOS, D Grade silicon epi wafer, SiC Epitaxial Wafer P-SBD
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to... Mehr sehen
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