IGBT mit hoher Leistung
(10)
Aufladestelle Hochleistungs-IGBT-Transistor Mehrzweck für OBC
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:Charging Pile High Power IGBT, OBC High Power IGBT, Multipurpose IGBT Transistor
Product Description: High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and... Mehr sehen
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Multifunktionaler Leistungstransistor und IGBT Hochspannung 1200V 40A
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:Multifunctional Power Transistor And IGBT, Power Transistor And IGBT 1200V, 40A IGBT High Voltage
Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power capacity. It is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. H... Mehr sehen
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Stabiler Ladehaufen Ultra schnelle IGBT, industriell isolierter Bipolartransistor
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:Stable Ultra Fast IGBT, Charging Pile Ultra Fast IGBT, Industrial Insulated Gate Bipolar Transistor
Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching frequency, high reliability, and high curren... Mehr sehen
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400A/Cm2 Hochleistungs-IGBT praktisch für Photovoltaik-Inverter
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:400A/Cm2 High Power IGBT, High Power IGBT Practical, Photovoltaic Inverter HV IGBT
400A/c㎡ IGBT with Advantages Strictly Meeting Vehicle Specification Requirements Product Description: High Power IGBT is an advanced Gate Bipolar Transistor (IGBT) that provides high power, faster switching speed and higher current density. It is capable of handling high power applications like OBC,... Mehr sehen
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60KHz praktische Hochleistungs-IGBT-Multiscene mit schneller Schaltgeschwindigkeit
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:60KHz High Power IGBT, Practical High Power IGBT, Multiscene IGBT High Power
High Power IGBT with Faster Switching Speed Product Description: High Power IGBT is an insulated gate bipolar power module with a narrow mesa design, providing more optimized groove combination design, higher reliability design and strictly referring to vehicle specification requirements. It has a h... Mehr sehen
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Industrielle Hochleistungs-IGBT-Multipurpose-Schweißmaschine
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:Industrial High Power IGBT, High Power IGBT Multipurpose, Welding Machine High Voltage IGBT
High Power IGBT 400A/c㎡ 60KHz for Industrial Applications Product Description: High Power IGBT is a kind of Insulated Gate Bipolar Power, High Power Bipolar Transistor and Insulated Gate Bipolar Transistor. It is designed with a Narrow Mesa Design, More Optimized Groove Combination Design, Higher Re... Mehr sehen
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Langlebiger industrieller Hochstrom-IGBT, isolierter Tortransistor zur Energiespeicherung
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:Durable High Current IGBT, Industrial High Current IGBT, Energy Storage Insulated Gate Transistor
High Reliability Design IGBT Device for Industrial Applications Product Description: High Power IGBT is a high power gate bipolar transistor, which is an ideal choice for applications with high current density and faster switching speed. It has a current density of 400A/c㎡ and a switching speed of 6... Mehr sehen
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Inverter IGBT Hochfrequenz stabiler 60KHz Multiscene Hochstrom
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:Inverter IGBT High Frequency, IGBT High Frequency Stable, Multiscene IGBT High Current
60KHz IGBT 400A/c㎡ Device for Application Insulated Gate Bipolar Transistor Product Description: High Power IGBT High Power IGBT is a kind of Insulated Gate Bipolar Transistor (IGBT) which is developed to provide high current density and power capacity. Its device type is IGBT. This type of IGBT can... Mehr sehen
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650V 50A Hochleistung IGBT Multifunktions-Hochgeschwindigkeit für die Energiespeicherung
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:650V High Power IGBT, 50A High Power IGBT, Multifunctional High Speed IGBT
High Voltage IGBT with Faster Switching Speed and High Power Product Description: High Power IGBT is an insulated gate bipolar transistor (IGBT) inverter that provides higher power and switching speed than other IGBTs. It is designed with a narrow mesa design, more optimized groove combination desig... Mehr sehen
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Praktische 60KHz Hochfrequenz IGBT, Multi-Funktion Gate Bipolar Transistor
Preis: Confirm price based on product
MOQ: Negotiable
Lieferzeit: 2-30 days (Depends on Total Quantity)
Marke: REASUNOS
Markieren:Practical High Frequency IGBT, 60KHz High Frequency IGBT, Multi Function Gate Bipolar Transistor
High Power IGBT Device for Industrial Applications Product Description: High Power Insulated Gate Bipolar Transistor (IGBT) is a type of power semiconductor device specifically designed to deliver high power output. It is ideal for applications requiring high voltage and high current density. It fea... Mehr sehen
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