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Diskrete Halbleiter
(21)
Zweipoliger BJT Transistor-getrennte Halbleiter PBHV8540X PBHV8540 Nexperia
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: Nexperia USA Inc.
Markieren:PBHV8540X, PBHV8540, Nexperia Bipolar BJT Transistor
PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-6... Mehr sehen
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FETs Transistoren MOSFET 49V 80A N-Kanal BTS282Z E3230 TO220-7
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: Infineon Technologies/International Rectifier IOR
Markieren:49V 80A Transistors FETs, N-Channel MOSFET Transistors FETs
BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by st... Mehr sehen
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IRF1404ZPBF N-Kanal-Transistor 180A 200W HEXFET FET MOSFET
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: Infineon Technologies/International Rectifier IOR
Markieren:IRF1404ZPBF N Channel Transistor, 180A 200W HEXFET FET MOSFET, N Channel Transistor 180A 200W
IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Ch... Mehr sehen
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BTA16-800CW BTA16 TRIAC Thyristor 800V 16A Diskrete Halbleiter
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: STMicroelectronics
Markieren:800V 16A Discrete Semiconductors, BTA16 TRIAC Thyristor, BTA16-800CW BTA16
BTA16-800CW TRIAC Standard 800 V 16 A Through Hole TO-220 Discrete Semiconductor Products Thyristors --TRIAC Standard 800 V 16 A Through Hole TO-220 T1610, T1635, T1650 BTA16, BTB16 Snubberless™, logic level and standard 16 A Triacs Datasheet Applications• Snubberless versions (BTA/BTB...W and T1635... Mehr sehen
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D15XB100 Induktionsherd Brückengleichrichter 15A 1000V SIP4
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: SHINDENGEN
Markieren:D15XB100 Induction Cooker Bridge Rectifier, Induction Cooker Bridge Rectifier 15A 1000V, SIP4 bridge rectifier for induction cooker
D15X100 D15XB100 SHINDENGEN Bridge Rectifiers 15A 1000V SIP4 for induction cooker Product Technical Specifications Part number D15X100 Base part number D15XB100 EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPA... Mehr sehen
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06N90E FMV06N90E FMH06N90E Diskrete Halbleiter 900V 6A
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: FUJI
Markieren:FMH06N90E Discrete Semiconductors, FMV06N90E Discrete Semiconductors, 06N90E FMV06N90E
06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Electronic components 06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Product Technical Specifications Part number FMV06N90E FMH06N90E Base part number 06N90E EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVH... Mehr sehen
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Infineon HEXFET Leistungs-MOSFET N-Kanal 55V 30A DPAK IRLR3915TRPBF
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: Infineon Technologies/International Rectifier IOR
Markieren:Infineon HEXFET Power MOSFET, MOSFET N Channel 55V 30A, 55V 30A HEXFET Power MOSFET
IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis... Mehr sehen
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IRF1404 IRF1404PBF N-Kanal-Leistungs-MOSFET 40 V Diskrete Halbleiter
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: INFINEON
Markieren:IRF1404PBF N Channel Power MOSFET, IRF1404 N Channel Power MOSFET, MOSFET 40V Discrete Semiconductors
IRF1404 IRF1404PBF IRF1404Z IRF1404ZPBF 40V Single N-Channel Power MOSFET in a TO-220 package About IRF1404PBF: Summary of Features IRF1404 40V Single N-Channel Power MOSFET in a TO-220 package Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product ... Mehr sehen
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GT50N322A 50N322 IGBT N-Kanal Diskrete Halbleiter Durchsteckmontage
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: Toshiba America Electronic Components
Markieren:50N322 IGBT N Channel, GT50N322A IGBT N Channel, IGBT N Channel Discrete Semiconductors
GT50N322A 50N322 Toshiba America Electronic Components IGBT N-Channel 1000V 3-Pin TO-3P(N) DISCRETE IGBT Components Product Technical Specifications Part number GT50N322A Base part number 50N322 EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVHC Yes SVHC Excee... Mehr sehen
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TIP122 TIP127 TIP142P NPN PNP Transistor Bipolare diskrete Halbleiter
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: STMicroelectronics
Markieren:TIP142P NPN PNP Transistor, TIP122 TIP127 NPN PNP Transistor, Bipolar Discrete Semiconductors
TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P Complementary NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain perfor... Mehr sehen
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IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: Infineon Technologies/International Rectifier IOR
Markieren:100V 130A FET HEXFET Power Mosfet, IRFB4310PBF, IRFB7440PBF
IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the... Mehr sehen
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IHW30N160R2 IGBT-Transistor H30R1602 Leistungshalbleiter
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: Infineon Technologies/International Rectifier IOR
Markieren:IHW30N160R2 IGBT Transistor, H30R1602 Power Semiconductor, IHW30N160R2
IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series Applications: • Inductive Cooking • Soft Switching Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic... Mehr sehen
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IXYS IXGH24 Diskrete Hochspannungs-IGBT-Halbleiter IXGH24N170
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: IXYS
Markieren:IXGH24 High Voltage IGBT, IXYS High Voltage IGBT, IGBT Discrete Semiconductors
IXGH24N170 IXYS High Voltage IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr IXYS Series - Package Tu... Mehr sehen
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KBL410 KBL610 Siliziumbrückengleichrichter KBPC610 Diskrete Halbleiterprodukte
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: MDD
Markieren:KBL610 Silicon Bridge Rectifier, KBL410 Silicon Bridge Rectifier, KBPC610 Discrete Semiconductor Products
KBL410 KBL610 KBU610 KBU810 KBU1010 KBU1510 KBU2510 KBPC610 KBL Series Silicon Bridge Rectifier Diodes-Bridge Rectifiers -Discrete Semiconductor Products Transistors Description: Through Hole Silicon Bridge Rectifier, KBL Series, KBL410 Type, 4 Pins, Reverse Voltage 1000V Max. Forward Current 4 A Ma... Mehr sehen
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V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Gleichrichter
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: Vishay General Semiconductor
Markieren:V20PWM45 Vishay Semiconductor, Vishay Semiconductor TMBS Trench, MOS Barrier Schottky Rectifier
V20PWM45 V20PWM45C-M3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 AV20PWM45C High Current Density... Mehr sehen
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Energie Mosfets der n-Kanal-Transistor-getrennte Halbleiter-SIHF10N40D-E3
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: Vishay Semiconductor
Markieren:SIHF10N40D-E3 Power Mosfets, N Channel Transistor, Discrete Semiconductors SIHF10N40D-E3
SIHF10N40D-E3 power mosfets N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. If ... Mehr sehen
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PM080P150CG Powercube Semi middle voltage mosfet
Preis: Negotiated
MOQ: 10pcs
Lieferzeit: Negotiable
Quote Powercube electronics parts online at icschip.com. Angel Technology Electronics is a leading distributor of Powercube Semi. PM080P150CG Powercube Semi middle voltage mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generati... Mehr sehen
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I2C-Bus-kontrollierter Verstärker IC TDF8546 DF8546JV/N2Z TDF8546J/N2 TDF8546JS
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: Philip
Markieren:DF8546JV/N2Z Amplifier IC, TDF8546J Amplifier IC, Bus Controlled Amplifier IC
TDF8546 DF8546JV/N2Z TDF8546J/N2 TDF8546JS I2C bus controlled best efficiency amplifier IC Summary of Features The TDF8546 is one of a new generation of complementary quad Bridge-Tied Load (BTL) audio power amplifiers intended for automotive applications. It has a best efficiency mode with full I2C-... Mehr sehen
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IKW75N60TXK IKW75N60 K75T60 GETRENNTES IGBT durch Infineon Technologies
Preis: Negotiated
MOQ: 10
Lieferzeit: 2-15days
Marke: Infineon Technologies
Markieren:K75T60 Infineon Discrete Igbt, IKW75N60TXK Infineon Discrete Igbt
IKW75N60TXK IKW75N60 K75T60 DISCRETE IGBT by Infineon Technologies IGBT in TRENCHSTOP™ and Fieldstop technology with soft fast recovery anti-parallel Emitter Controlled HE diode Applications: Frequency Converters Uninterrupted Power Supply More Similar IGBT part number for General Semiconductor: PAR... Mehr sehen
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Des Energie-Moduls BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT elektronische Bauelemente
Preis: Negotiated
MOQ: 10pieces
Lieferzeit: 2-15days
Marke: Infineon Technologies
Markieren:BSM50GD120DN2 IGBT Power Module, BSM50GD120DN2BOSA1 IGBT Power Module
BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT Power Module Electronic components BSM 50 GD 120 DN2 Serise Description: • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT Power Module Specification: Category ... Mehr sehen
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