Mosfet-Leistungstransistor
(18)
Multi Functional Mosfet Power Transistor Halogen - Free Devices Available
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
Mosfet Power Transistor Description The Power MOSFET is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the po... Mehr sehen
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Ursprünglicher Hochspannungsmosfet-Leistungstransistor Mosfet-Fahrer Using Transistor
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: OTOMO
Markieren:Ursprünglicher Mosfet-Leistungstransistor, Hochspannungsmosfet-Leistungstransistor, SGS Mosfet-Fahrer Using Transistor
Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the ... Mehr sehen
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8H02ETS verdoppeln niedriger Tor-Vorwurf n-Kanal Mosfet-Leistungstransistor-20V
Preis: Negotiated
MOQ: 1000-2000 PCS
Lieferzeit: 1 - 2 Weeks
Marke: OTOMO
Markieren:Doppeln-Kanal Mosfet-Leistungstransistor, Mosfet-Leistungstransistor 20V, Mosfet-Leistungstransistor-niedriger Tor-Vorwurf
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) &l... Mehr sehen
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- ... Mehr sehen
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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Fiel... Mehr sehen
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P ... Mehr sehen
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High Performance Mosfet Power Transistor With Extreme High Cell Density
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
Highest Performance Mosfet Power Transistor With Extreme High Cell Density Mosfet Power Transistor Feature Description It is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteri... Mehr sehen
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High Performance Mosfet Power Transistor With Extreme High Cell Density
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching behavior is well controlled with a ... Mehr sehen
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OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status ... Mehr sehen
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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters ... Mehr sehen
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Durable High Speed Power Switching Transistor , Power Darlington Transistor
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (... Mehr sehen
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS... Mehr sehen
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection
Preis: Negotiated
MOQ: Negotiation
Lieferzeit: 1 - 2 Weeks
Marke: Hua Xuan Yang
Markieren:n channel mosfet transistor, high voltage transistor
General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID = 6A RDS(ON) < 2... Mehr sehen
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MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel
Preis: Negotiable
MOQ: 960
Lieferzeit: 5-15days
Marke: OTOMO
MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel32-Bit FLASH ARM® Cortex®-M3 72MHz 2V ~ 3.6V LQFP-64_10x10x05P ST Microelectronics RoHS Mehr sehen
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Doppeln Art Hochleistung hohen gegenwärtigen Mosfet-Leistungstransistor-
Preis: Negotiated
MOQ: 1000-2000 PCS
Lieferzeit: 1 - 2 Weeks
Marke: OTOMO
Markieren:Hoher gegenwärtiger Mosfet-Leistungstransistor, Doppeln Art Mosfet-Leistungstransistor-, Mosfet-Leistungstransistor-Hochleistung
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electric... Mehr sehen
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6.5A 30V Mosfet-Leistungstransistor-Doppeln-kanal-ununterbrochener Abfluss-Strom
Preis: Negotiated
MOQ: 1000-2000 PCS
Lieferzeit: 1 - 2 Weeks
Marke: OTOMO
Markieren:Leistungstransistor Mosfet-30V, Hochspannungstransistor 6.5A, Spule Mosfet-Leistungstransistor
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electr... Mehr sehen
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HXY9926A-Logik Mosfet-Schalter, Doppeln Kanal des Mosfet-Netzschalter-±1.2v VGS
Preis: Negotiated
MOQ: 1000-2000 PCS
Lieferzeit: 1 - 2 Weeks
Marke: OTOMO
Markieren:HXY9926A-Logik Mosfet-Schalter, Netzschalter Mosfet-20v, SGS Mosfet-Netzschalter
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-direction... Mehr sehen
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RoHS verdoppeln n-Kanal Mosfet-Leistungstransistor SOT-23-6L MOSFETS 6,0 ein VDSS
Preis: Negotiated
MOQ: 1000-2000 PCS
Lieferzeit: 1 - 2 Weeks
Marke: OTOMO
Markieren:RoHS Mosfet-Leistungstransistor, 6, 0 A hoher gegenwärtiger mosfet-Schalter, Leistungstransistor Mosfet-8205A
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and C... Mehr sehen
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