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Halbleiter-Substrat
(88)
2 Stärke Zoll-Gallium-Phosphid-hüllte Kristallsubstrat-Gap-Wafer-0,3 Oberfläche ein
Preis: BY CASE
MOQ: 5PCS
Lieferzeit: 2-4weeks
Marke: zmkj
Markieren:Oblatensubstrat, Halbleiterwafer
2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer ZMKJ can provides 2inch GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100). Gallium ph... Mehr sehen
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BAW-Gerät-Durchmesser 50.8mm 1 Zoll AlN-Aluminium-Nitrid-Wafer
Preis: by case
MOQ: 1pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:AlN-Aluminium-Nitrid-Oblate, 50.8mm Aluminium-Nitrid-Oblate, BAW-Geräte AlN-Oblate
dia50.8mm 2inch 1inch AlN substrate/AlN single crystal wafers 10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm AlN substrate AlN single crystal wafers Applications of AlN template we have developed a serials of proprietary processes and technologies to fabricate high-quality AlN templa... Mehr sehen
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900nm 4 Lithium-Niobat-hauchdünne Filme des Zoll-LiNbO3 überlagern auf Silikon-Substrat
Preis: by case
MOQ: 2pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:Oblate des Lithium-Niobates LiNbO3, 4-Zoll-Lithium-Niobat-Wafer, Lithium-Niobat 900nm auf Isolator
4inch 6inch 300-900 nm Lithium Niobate LiNbO3 LN Thin Films (LNOI) on silicon wafer Direction of application: · Electro-Optic Modulators · Delay Lines · Electro-Optic Q Switches · X-BAR · Phase Modulator Devices · Nonlinear Optics · Ferroelectric Memory Devices Characteristic Specification 300-900 n... Mehr sehen
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Industrielles F.E. des Halbleiter-Substrat-S Zn lackierte InP-Indium-Phosphid-einzelne Kristallscheibe
Preis: by case
MOQ: 3pcs
Lieferzeit: 2-4weeks
Marke: zmkj
Markieren:gasb substrate, wafer substrate
2inch/3inch/4inch S/Fe/Zn doped InP Indium Phosphide Single Crystal Wafer Indium phosphide (InP) is an important compound semiconductor material with the advantages of high electronic limit drift speed, good radiation resistance and good thermal conductivity. Suitable for manufacturing high frequenc... Mehr sehen
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2-6 einzelner Kristall-Substrat-Wafer des Zoll-Halbleiter-Substrat-LiNbO3
Preis: by case
MOQ: 25pcs
Lieferzeit: 2-4weeks
Marke: zmkj
Markieren:wafer substrate, semiconductor wafer
4inch diameter 100mm Lithium niobate LiNbO3 substrate wafer, LN wafer for saw and optical,SAW Grade LiNbO3 Crystal ingot Description: Lithium niobate (LiNbO3) is a ferroelectric material suitable for a variety of applications. Its versatility is made possible by the excellent electro-optic, nonline... Mehr sehen
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Y-42° LT Lithium Kristall Tantalate-LiTaO3, Fe+ lackierte Oblate des Substrat-300um für sah optisches
Preis: by case
MOQ: 25pcs
Lieferzeit: 2-4weeks
Marke: zmkj
Markieren:wafer substrate, semiconductor wafer
2inch/3inch/4inch/6inch Y-42°/36°/128° LT Lithium tantalate (LiTaO3) crystal / Fe+ doped type 250um/300um substrate wafer Product Name:Lithium tantalate (LiTaO3) crystal substrateProduct Description:Lithium tantalate (LiTaO3) single crystal has a very good electro-optical, piezoelectric and pyroelec... Mehr sehen
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6 Schablonen-Wafer Zoll-Sapphire Baseds AlN für Geräte 5G BAW
Preis: by case
MOQ: 5pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:Sapphire based AlN templates, 6 Inch sapphire wafer, 6 Inch AlN templates
2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate sapphire window sapphire wafer Applications of AlN template Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future electronic devices. As a typical kind of 3rd/4th-g... Mehr sehen
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Art Poliersiliziumoxid-Wafer 6 Zoll-N der Siliziumscheibe-DSP SiO2
Preis: by quantites
MOQ: 25pcs
Lieferzeit: 1-4weeks
Marke: ZMSH
Markieren:N Type Polished Silicon Wafer, SiO2 Silicon Oxide Wafer, DSP Polished Silicon Wafer
6inch 8inch 2inch 1inch FZ CZ N-type polished silicon wafer DSP SiO2 wafers Silicon oxide wafer Polished Silicon Wafer High-purity (11N) 1-12 inch single- and double-polished Czochralski wafers Sizes 1" 2" 3" 4" 5" 6" 8" 12" and special size and specification ... Mehr sehen
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4 Zoll-Germanium-Halbleiter-Substrat-GE-Wafers für Infrarotco2-Laser
Preis: by specification
MOQ: 3PCS
Lieferzeit: 2-4weeks;
Marke: ZMSH
Markieren:Germanium Semiconductor Substrate, Ge Wafers Germanium Substrate, Co2 Lasers Silicon Wafer Substrate
4inch N-type Ge wafers Germanium substrate Ge window for infrared Co2 lasers Ge Material Introduce Among optical materials, germanium materials are increasingly widely used in infrared and night vision technologies. Germanium belongs to the IV main group element and has a diamond structure. Germaniu... Mehr sehen
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10um GA lackierte Germanium-Substrat-GE-Fenster für Infrarotco2-Laser
Preis: by specification
MOQ: 3PCS
Lieferzeit: 2-4weeks;
Marke: ZMSH
Markieren:Ga Doped Germanium Substrate, 10um Germanium Lenses, Ge Window For Infrared Co2 Lasers
4inch N-type Ge wafers Germanium substrate Ge window for infrared Co2 lasers Ge Material Introduce Among optical materials, germanium materials are increasingly widely used in infrared and night vision technologies. Germanium belongs to the IV main group element and has a diamond structure. Germaniu... Mehr sehen
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Art Siliziumscheibe-quadratisches Stück SEM des 10x10mm Rasterelektronenmikroskops P
Preis: by quantites
MOQ: 25pcs
Lieferzeit: 1-4weeks
Marke: ZMSH
Markieren:Electron Microscope Silicon Wafer Substrates, 10x10mm P Type Silicon Wafer, Square Polished Silicon Wafer
2inch 3inch 4inch 5inch 6inch 8inch 12inch FZ CZ N-type polished silicon wafer DSP SiO2 wafers Silicon oxide wafer 1inch 2inch 10x10mm Scanning electron microscope silicon wafer small square piece SEM Polished Silicon Wafer High-purity (11N) 1-12 inch single- and double-polished Czochralski wafers S... Mehr sehen
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GE-Oblaten-Halbleiter-Substrat GA Durchmesser-50.8mm lackierte Art 500um des Substrat-N
Preis: by case
MOQ: 5pcs
Lieferzeit: 2-4weeks
Marke: zmkj
Markieren:N Type GaAs Epi Wafer, Ga Doped Silicon Wafer Substrate, Ge Wafers Silicon Substrate
2INCH dia50.8mm Ga doped Ge substrate 4inch N-type 500um Ge wafers Ge wafer for microelectronic application N type, Sb doped Ge wafer N type,undoped Ge wafer P type,Ga doped Ge wafer Available size:2”-6” Available orientation: (100),(111),or custom specs. Available grade: IR grade, electronic grade ... Mehr sehen
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Einzelne Crystal Ge optische Linse Soem Durchmessers 25.4mm
Preis: by case
MOQ: 10pcs
Lieferzeit: 2-4weeks
Marke: zmkj
Markieren:Einzelner Crystal Gallium Nitride Wafer, Gallium-Nitrid-Oblate Durchmessers 25.4mm, Soem-Gallium-Nitrid-Oblate
dia25.4mm Ge windows Single Crystal Germanium Ge Wafer for Semiconductor device Product Description ZMKJ is a worldwide supplier of single crystal Germanium lens and single crystal Ge ingot , we have a strong advantage in providing single crystal wafer to micro-electronics and opto-electronics indus... Mehr sehen
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Art GaAs-Halbleiter-Substrat VGF 6 Zoll-N für Epitaxie
Preis: BY case
MOQ: 3PCS
Lieferzeit: 2-6weeks
Marke: ZMSH
Markieren:GaAs-Halbleiter-Substrat, VGF-Halbleiter-Substrat, Art Substrat der Epitaxie n
VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the semiconductor industry. Less power consumption and more efficiency offered by this GaAs wafers are attracting the market play... Mehr sehen
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2 Film-Silikon basierte des Zoll-1000nm AlN Aluminium-Nitrid-Halbleiter-Substrat
Preis: by case
MOQ: 3pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:AlN-Film Halbleiter-Substrat, AlN-Aluminium-Nitrid-Substrat, Oblate des Aluminium-Nitrids 1000nm
4inch 6inch Silicon-based AlN templates 500nm AlN film on silicon substrate Applications of AlN template Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, ... Mehr sehen
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4" Sapphire Based GaN Templates Semiconductor Substrate
Preis: by case
MOQ: 5pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:5G sah gan Schablonen, 4" gan Schablonen, GaN-Halbleiter Substrat
2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate Properties of GaN Chemical properties of GaN 1) At room temperature, GaN is insoluble in water, acid and alkali. 2)Dissolved in a hot alkaline solution at a very slow rate. 3) NaOH, H2SO4 and H3PO4 can quickly corrode th... Mehr sehen
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6" Silikon basierte Film AlN-Schablonen-500nm AlN auf Silikon-Substrat
Preis: by case
MOQ: 3pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:AlN-Film auf Silikonsubstrat, Schablonen 500nm AlN, 6" AlN-Schablonen
diameter 150mm 8inch 4inch 6inch Silicon-based AlN templates 500nm AlN film on silicon substrate Applications of AlN template Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future electronic devices. As a typical kind of 3rd/4th-generation sem... Mehr sehen
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30mm Durchmesser AlN einzelner Crystal Semiconductor Substrate
Preis: by case
MOQ: 3pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:AlN-Halbleiter-Substrat, 30mm Durchmesser-aln Substrat, 30mm aln sondern Kristall aus
diameter 150mm 8inch 4inch 6inch Silicon-based AlN templates 500nm AlN film on silicon substrate Applications of AlN template Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future electronic devices. As a typical kind of 3rd/4th-generation sem... Mehr sehen
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5G sah einzelner Kristall AlN-Halbleiter-Substrat des Durchmesser-10mm
Preis: by case
MOQ: 1pcs
Lieferzeit: in 30days
Marke: ZMKJ
Markieren:Durchmesser 10mm aln Substrat, 5G sah Halbleiter-Substrat, einzelnes Kristall-aln Substrat
10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm AlN substrate AlN single crystal wafers Applications of AlN template Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future electronic devices. As a typical kind of 3rd/4th-generati... Mehr sehen
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Art 15°-Halbleiter-Substrat-Si eine 4 Zoll-N lackierte GaAs-Wafer SSP
Preis: 100-200usd/pcs
MOQ: 5pcs
Lieferzeit: 2-4weeks
Marke: zmkj
Markieren:Si lackierte GaAs Wafe, Halbleiter-Substrat GaAs Wafe, N-Art ssp Oblate
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------------------------------------------------------------------------------------------------(GaAs) Gallium Arsenide WafersGallium arsenide (GaAs) is a c... Mehr sehen
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