Indium-Phosphid-Oblate
(33)
Schwarze Indium-Phosphid-Oblate, Halbleiterwafer für LD-Anwendung
Preis: by case
MOQ: 5pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:mgo substrate, gap wafer
2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal The tCZ growth (modified Czochralski method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed. The dopant (Fe, S, Sn ... Mehr sehen
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2 - 6 Zoll-Gallium-Phosphid-Kristallsubstrat-Gap-Wafer 0,1 - 2mm Stärke
Preis: by case
MOQ: 5pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:mgo substrate, gap wafer
2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer ZMKJ can provides high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch . Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material for... Mehr sehen
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Platten-Indium-Phosphid-Oblaten-ausgezeichnetes Halbleiter-Material GEs optische
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:mgo substrate, gap wafer
Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ) Crystal Structure Cube Lattice Co... Mehr sehen
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GE-Linsen-Halbleiter-Substrate INP-Indium-Gallium-Phosphid-Oblate
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:Ge lens Indium Phosphide Wafer, semiconductor substrates Indium Phosphide Wafer, inp Ge single crystal
4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ... Mehr sehen
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4 Zoll-Halb-isolierender Indium-Phosphid InP-Wafer für LD-Laserdiode
Preis: by case
MOQ: 10pcs
Lieferzeit: 3-4weeks
Marke: zmkj
Markieren:inp wafer, mgo substrate
4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal growth (modified Czochralski method) i... Mehr sehen
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3,58 Oblaten-Magnesium-Oxid-Kristall-Substrat Dichte-MgO-Substrat-/MgO
Preis: by case
MOQ: 10pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp wafer, gap wafer
MgO substrates,10X10mm MgO wafer,semiconductor wafer,Magnesium oxide (MgO) crystal substrate, crystals supplier MgO WAFER 5x5mm Product Description:Magnesium oxide (MgO) is excellent for monocrystalline substrate is widely used in production of the ferroelectric thin film, he magnetic film, optical ... Mehr sehen
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Germanium-einzelne Kristalle Inp-Oblaten-Halbleiter-Substrate
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp wafers semiconductor substrates, Semiconductor Germanium inp wafers, germanium single crystals substrates
4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ... Mehr sehen
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Halb isolierende 2 Art blinder InP-Indium-Phosphid-Wafer des Zoll-50mm N
Preis: by case
MOQ: 3pcs
Lieferzeit: 3-4weeks
Marke: zmkj
Markieren:50mm indium Phosphide Wafer, Semi Insulating indium Phosphide Wafer, n type inp wafer
2inch dia50.8mm n-type dummy prime grade InP indium Phosphide Wafer 4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP... Mehr sehen
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Hohe brechende Oberflächen-GE Germanium-Oblate DSP
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:DSP Surface Germanium Wafer, high refractive Germanium Wafer, DSP Surface ge wafer
2inch 4inch 6inch N Type P type doped Germanium Single Crystals Wafers, Germanium Single Crystals optical plates Ge wafer / Ge window Germanium (Ge) is the preferred lens and window material for high performance infrared imaging systems in the 8–12 um wavelength band. Its high refractive index makes... Mehr sehen
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GE optische Inp-Oblate, Halbleiterbauelement-Indium-Phosphid-Oblate
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:Ge Optical inp wafer, Ge Optical Indium Phosphide Wafer, semiconductor device inp wafer
Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ) Crystal Structure Cube Lattice Co... Mehr sehen
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Bogen-Frankreich-Wachstums-Würfel Crystal Mgo Substrates, Magnesium-Oxid-Kristall
Preis: by case
MOQ: 10pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:Arc France mgo substrates, Cube crystal mgo substrates, mgo magnesium oxide crystal
MgO substrates,10X10mm MgO wafer,semiconductor wafer,Magnesium oxide (MgO) crystal substrate, crystals supplier MgO WAFER 5x5mm Product Description: Magnesium oxide (MgO) is excellent for monocrystalline substrate is widely used in production of the ferroelectric thin film, he magnetic film, optical... Mehr sehen
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Germanium-einzelne Kristall-Indium-Phosphid-Wafer fertigte optische Linse 4/6 Zoll GEs besonders an
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp wafer, gap wafer
4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ... Mehr sehen
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N / P schreiben Germanium-Oblate, Germanium-Optik-Platten-Durchmesser 0,5 | 150mm
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp wafer, mgo substrate
2inch 4inch 6inch N Type P type doped Germanium Single Crystals Wafers, Germanium Single Crystals optical plates Ge wafer / Ge window Germanium (Ge) is the preferred lens and window material for high performance infrared imaging systems in the 8–12 um wavelength band. Its high refractive index makes... Mehr sehen
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Primär-/blinde Grad-Indium-Phosphid-Oblaten-Stärke 350um für LD
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:mgo substrate, gap wafer
2inch N-type P-type thickness 350um primary grade Dummy grade Indium Phosphide crystal InP substrates wafer for LD Indium phosphide single crystal material is one of most important semiconductor compound, which is key raw material for laser diode of indium phosphide substrate(LD), light emitting dio... Mehr sehen
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Germaniumsubstrat GE Flachfensteroptische Linsen Wärmebildgebung Anwendungen und Infrarotspektroskopie Hohe Härte
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4 weeks
Marke: ZMSH
Markieren:Thermal Imaging Applications Germanium substrate, Infrared Spectroscopy Germanium substrate, High hardness Germanium substrate
Product Description Germanium substrate GE Flat Windows Optical Lenses Thermal Imaging Applications and Infrared Spectroscopy High hardness Germanium window (Ge) is a chemically inert material with a permissive spectrum range of 2-12μm, which is a commonly used infrared optical material, with high h... Mehr sehen
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InAs Indium Arsenid2 Zoll 3 Zoll 4 Zoll Einzelkristall Substrat N/P Typ Halbleiter Wafer Dicke 300-800um
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4 weeks
Marke: ZMSH
Markieren:4 inch Indium Arsenide Wafer, 3 inch Indium Arsenide Wafer, 2 inch Indium Arsenide Wafer
Product Description InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um Indium InAs or indium arsenide monolithic is a semiconductor composed of indium and arsenic. It has a gray cubic crystal appearance and a melting point of 942°C. Indium... Mehr sehen
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Ge-Germanium Wafer Halbleiter Substrate <111> Konzentrierende Photovoltaik CPV
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4 weeks
Marke: ZMSH
Markieren:CPV germanium wafer, custom size germanium wafer, semiconductor germanium wafer
Product Description Ge germanium wafer semiconductor substrates concentrating photovoltaic CPV custom size shapes Germanium has good semiconductor properties. High-purity germanium is doped with trivalent elements (e.g., indium, gallium, boron) to obtain P-type germanium semiconductors, and pentaval... Mehr sehen
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Magnesiumoxid Reinheit 95% MgO Film Substrat 5x5 10x10 20x20 Dicke 0,5 mm 1,0 mm Ausrichtung <001> <110> <111>
Preis: by case
MOQ: 10pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:5x5 MgO film substrate, 20x20 MgO film substrate, 10x10 MgO film substrate
Magnesium oxide purity 95% MgO film substrate 5x5 10x10 20x20 thickness 0.5mm 1.0mm orientation Product Description: Thin film substrate magnesium oxide (MgO) single crystal is a high-quality substrate material with excellent physical and chemical properties, such as high melting point, low dielectr... Mehr sehen
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InAs Wafer Doped Zn 2 Zoll Indium-Arsenid Wafer Dia 50mm Dicke 500um <100> angepasst
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4 weeks
Marke: ZMSH
Markieren:Customized Indium Arsenide Wafer, 2 Inch Indium Arsenide Wafer, 500um Indium Arsenide Wafer
2inch Indium Arsenide Wafer InAs Epitaxial Wafer for LD Laser Diode, semiconductor epitaxial wafer, 3inch InAs-Zn wafer, InAs single crystal wafer 2inch 3inch 4inch InAs-Zn substrates for LD application, semiconductor wafer, Indium Arsenide Laser Epitaxial Wafer Features of InAs-Zn Wafer - use InAs... Mehr sehen
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DFB Wafer N-InP Substrat Epiwafer aktive Schicht InGaAlAs/InGaAsP 2 4 6 Zoll für Gassensor
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4weeks
Marke: ZMSH
Markieren:2 inch InP substrate epiwafer, 4 inch InP substrate epiwafer, 6 inch InP substrate epiwafer
DFB wafer N-InP substrate epiwafer active layer InGaAlAs/InGaAsP 2 4 6 inch for gas sensor DFB wafer N-InP substrate epiwafer's brief A Distributed Feedback (DFB) wafer on an n-type Indium Phosphide (N-InP) substrate is a critical material used in the production of high-performance DFB laser diodes.... Mehr sehen
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