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Indium-Phosphid-Oblate
(29)
2 - 6 Zoll-Gallium-Phosphid-Kristallsubstrat-Gap-Wafer 0,1 - 2mm Stärke
Preis: by case
MOQ: 5pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:mgo substrate, gap wafer
2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer ZMKJ can provides high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch . Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material for... Mehr sehen
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Platten-Indium-Phosphid-Oblaten-ausgezeichnetes Halbleiter-Material GEs optische
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:MgO-Substrat, Gap-Oblate
Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ) Crystal Structure Cube Lattice Co... Mehr sehen
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Hohe brechende Oberflächen-GE Germanium-Oblate DSP
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:DSP Surface Germanium Wafer, high refractive Germanium Wafer, DSP Surface ge wafer
2inch 4inch 6inch N Type P type doped Germanium Single Crystals Wafers, Germanium Single Crystals optical plates Ge wafer / Ge window Germanium (Ge) is the preferred lens and window material for high performance infrared imaging systems in the 8–12 um wavelength band. Its high refractive index makes... Mehr sehen
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GE optische Inp-Oblate, Halbleiterbauelement-Indium-Phosphid-Oblate
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:GE optische inp-Oblate, Indium-Phosphid-Oblate GEs optische, Halbleiterbauelement inp-Oblate
Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ) Crystal Structure Cube Lattice Co... Mehr sehen
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Bogen-Frankreich-Wachstums-Würfel Crystal Mgo Substrates, Magnesium-Oxid-Kristall
Preis: by case
MOQ: 10pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:Bogen-Frankreich-MgO-Substrate, Berechnen Sie Kristallmgo-Substrate, MgO-Magnesiumoxidkristall
MgO substrates,10X10mm MgO wafer,semiconductor wafer,Magnesium oxide (MgO) crystal substrate, crystals supplier MgO WAFER 5x5mm Product Description: Magnesium oxide (MgO) is excellent for monocrystalline substrate is widely used in production of the ferroelectric thin film, he magnetic film, optical... Mehr sehen
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GE-Linsen-Halbleiter-Substrate INP-Indium-Gallium-Phosphid-Oblate
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:GE-Linse Indium-Phosphid-Oblate, Halbleitersubstrate Indium-Phosphid-Oblate, einzelner Kristall inp GEs
4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ... Mehr sehen
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Germanium-einzelne Kristalle Inp-Oblaten-Halbleiter-Substrate
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp-Oblatenhalbleitersubstrate, Halbleiter-Germanium inp-Oblaten, Substrate der einzelnen Kristalle des Germaniums
4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ... Mehr sehen
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Halb isolierende 2 Art blinder InP-Indium-Phosphid-Wafer des Zoll-50mm N
Preis: by case
MOQ: 3pcs
Lieferzeit: 3-4weeks
Marke: zmkj
Markieren:50mm Indium Phosphid-Oblate, Halb isolierende Indium Phosphid-Oblate, n-Art inp-Oblate
2inch dia50.8mm n-type dummy prime grade InP indium Phosphide Wafer 4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP... Mehr sehen
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Durchmesser-Schwarz-Farbe der Laserdiode InP-Indium-Phosphid-Oblaten-100mm
Preis: by case
MOQ: 10pcs
Lieferzeit: 3-4weeks
Marke: zmkj
Markieren:Laserdiode-Indium-Phosphid-Oblate, InP-Indium-Phosphid-Oblate, Laserdiode inp-Oblate
4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal growth (modified Czochralski method) i... Mehr sehen
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4 Zoll-Halb-isolierender Indium-Phosphid InP-Wafer für LD-Laserdiode
Preis: by case
MOQ: 10pcs
Lieferzeit: 3-4weeks
Marke: zmkj
Markieren:inp-Oblate, MgO-Substrat
4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal growth (modified Czochralski method) i... Mehr sehen
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Schwarze Indium-Phosphid-Oblate, Halbleiterwafer für LD-Anwendung
Preis: by case
MOQ: 5pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:MgO-Substrat, Gap-Oblate
2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal The tCZ growth (modified Czochralski method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed. The dopant (Fe, S, Sn ... Mehr sehen
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3,58 Oblaten-Magnesium-Oxid-Kristall-Substrat Dichte-MgO-Substrat-/MgO
Preis: by case
MOQ: 10pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp-Oblate, Gap-Oblate
MgO substrates,10X10mm MgO wafer,semiconductor wafer,Magnesium oxide (MgO) crystal substrate, crystals supplier MgO WAFER 5x5mm Product Description:Magnesium oxide (MgO) is excellent for monocrystalline substrate is widely used in production of the ferroelectric thin film, he magnetic film, optical ... Mehr sehen
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Primär-/blinde Grad-Indium-Phosphid-Oblaten-Stärke 350um für LD
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:MgO-Substrat, Gap-Oblate
2inch N-type P-type thickness 350um primary grade Dummy grade Indium Phosphide crystal InP substrates wafer for LD Indium phosphide single crystal material is one of most important semiconductor compound, which is key raw material for laser diode of indium phosphide substrate(LD), light emitting dio... Mehr sehen
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N / P schreiben Germanium-Oblate, Germanium-Optik-Platten-Durchmesser 0,5 | 150mm
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp-Oblate, MgO-Substrat
2inch 4inch 6inch N Type P type doped Germanium Single Crystals Wafers, Germanium Single Crystals optical plates Ge wafer / Ge window Germanium (Ge) is the preferred lens and window material for high performance infrared imaging systems in the 8–12 um wavelength band. Its high refractive index makes... Mehr sehen
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Germanium-einzelne Kristall-Indium-Phosphid-Wafer fertigte optische Linse 4/6 Zoll GEs besonders an
Preis: by case
MOQ: 3pcs
Lieferzeit: 1-4weeks
Marke: zmkj
Markieren:inp-Oblate, Gap-Oblate
4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell. Main Property Terms Production Method Czochralski method(CZ... Mehr sehen
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InP Laser Epitaxial Wafer Indium Phosphid Wafer DFB/EML Expitaxial Wafer für intelligente Sensorik
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4 weeks
Marke: ZMSH
2inch Semi-Insulating Indium Phosphide InP Epitaxial Wafer for LD Laser Diode,semiconductor epitaxial wafer, 3inch InP wafer, single crystal wafer 2inch 3inch 4inch InP substrates for LD application, semiconductor wafer, InP Laser Epitaxial Wafer Features of InP Laser Epitaxial Wafer - use InP wafe... Mehr sehen
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DFB Wafer N-InP Substrat Epiwafer aktive Schicht InGaAlAs/InGaAsP 2 4 6 Zoll für Gassensor
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4weeks
Marke: ZMSH
DFB wafer N-InP substrate epiwafer active layer InGaAlAs/InGaAsP 2 4 6 inch for gas sensor DFB wafer N-InP substrate epiwafer's brief A Distributed Feedback (DFB) wafer on an n-type Indium Phosphide (N-InP) substrate is a critical material used in the production of high-performance DFB laser diodes.... Mehr sehen
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InP FP Epiwafer InP-Substrat n/p Typ 2 3 4 Zoll mit einer Dicke von 350-650um für optische Netze
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4weeks
Marke: ZMSH
InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grow... Mehr sehen
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FP Epiwafer InP Substrat Kontaktschicht InGaAsP Dia 2 3 4 Zoll für OCT 1,3um Wellenlänge Band
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4weeks
Marke: ZMSH
FP epiwafer InP substrate contact layer InGaAsP Dia 2 3 4 inch for OCT 1.3um wavelength band FP epiwafer InP substrate's Brief Fabry-Perot (FP) epiwafers on Indium Phosphide (InP) substrates are key components in the development of optoelectronic devices, particularly laser diodes used in optical co... Mehr sehen
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DFB Epiwafer InP Substrat MOCVD Methode 2 4 6 Zoll Betriebswellenlänge: 1,3 μm, 1,55 μm
Preis: Negotiable
MOQ: Negotiable
Lieferzeit: 2-4weeks
Marke: ZMSH
DFB Epiwafer InP substrate MOCVD method 2 4 6 inch Operating wavelength: 1.3 µm, 1.55 µm DFB Epiwafer InP substrate's Brief DFB (Distributed Feedback) Epiwafers on Indium Phosphide (InP) substrates are key components used in fabricating high-performance DFB laser diodes. These lasers are critical fo... Mehr sehen
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